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Effect of Calcination Temperature on Interface Properties Between In2O3 and Au Electrode in Micro Gap Semiconductor Gas Sensors

Published online by Cambridge University Press:  01 February 2011

Jun Tamaki ,
Jun Niimi  and
Satoshi Konishi
Jun Tamaki
Affiliation:
[email protected], Ritsumeikan University, Dept. of Applied Chemistry, 1-1-1 Noji-higashi, Kusatsu-shi, Shiga, 525-8577, Japan, +81-77-561-2862, +81-77-561-2659
Jun Niimi
Affiliation:
[email protected], Ritsumeikan University, Dept. of Applied Chemistry, 1-1-1 Noji-higashi, Kusatsu-shi, Shiga, 525-8577, Japan
Satoshi Konishi
Affiliation:
[email protected], Ritsumeikan University, Dept. of Micro System Technology, 1-1-1 Noji-higashi, Kusatsu-shi, Shiga, 525-8577, Japan
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Abstract

The In2O3 thin film nanosensors were fabricated by dropping In(OH)3 sol on nano gap electrode with 0.1-2.5 micron of gap size, dried, and calcined at various temperatures. The grain size of In2O3 and thus the number of In2O3 grains were changed by calcining at 600-850 °C. The size of grain was increased from 15 nm at 600 °C to 55 nm at 850 °C, and thus the number of grains in 0.3 micron gap was decreased from 19 to 5.3. Contrary to the expectation, the small resistance changes to both 1 ppm Cl2 (resistance increase) and 0.5 ppm Cl2 (resistance decrease) were obtained for In2O3 nanosensors calcined at 700-850 °C. These were contributed to the changes in the surface and interface chemical state to suppress the adsorption of or substitution with Cl2 molecule.

Keywords

sensornanostructuresemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 915: Symposium R – Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications , 2006 , 0915-R06-21
Copyright
Copyright © Materials Research Society 2006

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References

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