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Effect of Annealing Under Uniform Stress on Photoluminescence, Electrical and Structural Properties of Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Effect of increased pressure (up to 1.5GPa) during annealing of Cz-Si on creation of thermal donors (at 720 - 1000K) and visible luminescence (peaking at 1.7- 2.2eV for samples annealed at up to 1420K) is reported. The observed phenomena are related to stress - stimulated oxygen clustering / precipitation in Cz-Si resulting in creation of specific defects.
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- Copyright © Materials Research Society 1997