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Dispersion Strengthening of Al Films by Oxygen Ion Implantation

Published online by Cambridge University Press:  21 February 2011

S. Bader ,
P.A. Flinn ,
E. Arzt  and
W.D. Nix
S. Bader
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestr. 92, 7000 Stuttgart, Germany
P.A. Flinn
Affiliation:
Intel Corporation, 3065 Bowers. Ave., Santa Clara, CA 95124 andStanford University, Department of Materials Science, Stanford, CA 94305-2205
W.D. Nix
Affiliation:
Stanford University, Department of Materials Science, Stanford, CA 94305-2205
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Abstract

Finely dispersed, stable Al-oxide particles were produced in Al films on Si substrates by oxygen ion implantation. A laser reflow technique was employed to vary the grain structure of some of the films. Transmission electron microscopy (TEM) was used to characterize the oxide particles and the grain size in the films, and a wafer curvature technique was employed to study the influence of microstructure on the deformation properties as a function of temperature.

For coarse grained laser reflowed films, ion implantation increased the strength considerably, both in compression and in tension. Weak beam TEM techniques showed that the strengthening is most likely caused by attractive interactions between dislocations and particles. As-deposited and ion implanted films showed a stable grain size of only 0.35 μm after annealing, which caused significant softening to occur in compression, especially at high temperature. However these films showed very high stresses in tension at temperatures below 130°C. In these films the presence of the oxide particles stabilizes the small grain size and this causes a weakening effect which can be attributed to diffusion controlled grain boundary relaxation mechanisms. The high tensile stresses at temperatures below 130°C can be explained by direct and indirect particle strengthening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 249
Copyright
Copyright © Materials Research Society 1993

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References

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