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Dielectric Function of “Narrow” Band Gap InN

Published online by Cambridge University Press:  11 February 2011

R. Goldhahn ,
S. Shokhovets ,
V. Cimalla ,
L. Spiess ,
G. Ecke ,
O. Ambacher ,
J. Furthmüller ,
F. Bechstedt ,
H. Lu  and
W. J. Schaff
R. Goldhahn
Affiliation:
Institute of Physics and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
S. Shokhovets
Affiliation:
Institute of Physics and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
V. Cimalla
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
L. Spiess
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
G. Ecke
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
O. Ambacher
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
J. Furthmüller
Affiliation:
Institut of Solid State Theory and Theoretical Optics, Friedrich Schiller University, 07743 Jena, Germany
F. Bechstedt
Affiliation:
Institut of Solid State Theory and Theoretical Optics, Friedrich Schiller University, 07743 Jena, Germany
H. Lu
Affiliation:
Departartment of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
W. J. Schaff
Affiliation:
Departartment of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
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Abstract

Spectroscopic ellipsometry studies in the energy range from 0.7 up to 5.5 eV were carried out in order to determine the dielectric function (DF) of ‘narrow’ band gap (< 1 eV) single-crystalline InN films grown by molecular beam epitaxy on sapphire substrates. The imaginary part of the DF is characterized by a strong increase immediately above the band gap and then by a nearly constant value up to 4 eV. Pronounced structures above 4 eV are attributed to transitions along the L-M direction in the Brillouin-zone as a comparison with first-principles calculations indicates. In contrast, sputtered layers (band gap ∼1.9 eV) studied for comparison show a completely different spectral shape of the DF. Finally, DF's of high In-content InGaN alloys are presented, providing further evidence that InN is a “narrow” band gap semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L5.9
Copyright
Copyright © Materials Research Society 2003

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References

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