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Deposition Of Uniform Size Metallic Nanoparticles For Use In Non Volatile Memories
Published online by Cambridge University Press: 01 February 2011
Abstract
In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.
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- Copyright © Materials Research Society 2007
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