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Deposition Of Uniform Size Metallic Nanoparticles For Use In Non Volatile Memories

Published online by Cambridge University Press:  01 February 2011

Emanuele Verrelli
Affiliation:
[email protected], National Technical University of Athens, Applied Physics and Mathematics, Heroon Polytechniou Str. 9, Zographou Campus, Athens, 15773, Greece, 0030 210 772 1679, 0030 210 772 3338
Dimitris Tsoukalas
Affiliation:
[email protected], National Technical University of Athens, Applied Physics and Mathematics, Heroon Polytechniou Str. 9, Zographou Campus, Athens, 15773, Greece
Konstantinos Giannakopoulos
Affiliation:
[email protected], NCSR Demokritos, Material Sciences, Aghia Paraskevi, 15310, Greece
Dimitris Ioannou
Affiliation:
[email protected], George Mason University, Electrical Engineering, Fairfax, VA, 22030, United States
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Abstract

In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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