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Deposition of Low-Stress Encapsulants on InP and GaAs

Published online by Cambridge University Press:  28 February 2011

U. K. Chakrabarti ,
S. J. Pearton ,
H. Barz ,
A. R. Vonneida ,
K. T. Short  and
J. W. Lee
U. K. Chakrabarti
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
H. Barz
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. R. Vonneida
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. W. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

AℓN deposited by D.C. triode sputtering and spin-on, phosphorus-doped glass (PSG) layers on GaAs and InP were investigated as encapsulants. These films have similar expansion coefficients to both GaAs and InP, minimizing the amount of strain induced in the near-surface region of the underlying wafer. We have quantified this effect by direct measurements of the stress in the films and by using secondary ion mass spectrometry profiling to measure the redistribution of Cr and Fe in encapsulated GaAs and InP respectively during high temperature processing. The dopant redistribution is considerably less for the AℓN and PSG films compared to the more conventional SiO2 and Si3N4 layers. The interaction of the films with the substrate at elevated temperatures is minimal as determined by Auger profiling and the electrical properties of the surface after removal of the encapsulants. The composition of the films remains essentially constant after annealing, as measured by Rutherford backscattering, and the thickness uniformity over large wafer diameters (2″) can be excellent with close control of the deposition parameters. The activation characteristics of low dose, Si-implanted layers in GaAs using either PSG or AℓN are comparable to those obtained using capless annealing or SiO2 or Si3N4 encapsulation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 691
Copyright
Copyright © Materials Research Society 1987

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