Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-12-01T04:36:10.763Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects in YBa2Cu3O7−δ Thin Films and Their Influences on Tc

Published online by Cambridge University Press:  15 February 2011

Jinhua Ye  and
Keikichi Nakamura
Jinhua Ye
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Keikichi Nakamura
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

Crystallographic defects introduced in the YBa2Cu3O7−δ thin films during depositions were studied using X-ray diffraction method, and their influences on superconducting properties were also investigated by examining Tc variation of the as-grown and post-annealed thin films. It was found that there exist several kinds of defects in the as-grown thin films, such as oxygen deficiency, cation disordering, and others like lattice dislocation, stacking faults, etc.. These defects could be relaxed by heat treatment at temperatures ranging from 400 to 900 °C, resulting in Tc enhancement more or less. Quantitative understandings of the relations among annealing temperature, structural relaxation, and Tc improvement has also been reached. The kinetics of the relaxation of the defects in the YBCO films was studied further using a high-temperature X-ray diffractometer. Interesting phenomena have been observed at around 400 °C due to abnormal desorption behavior of oxygen and at higher temperatures relating to cation ordering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 429
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eom, C. B., Sun, J. Z., Lairson, B. M., Streiffer, S. K., Marshall, A. F., Yamamoto, K., Anlage, S. M., Bravman, J. C., and Geballe, T. H., Physica C 171, p. 354 (1990).Google Scholar
2. Matijasevic, V., Rosenthal, P., Shinohara, K., Marshall, A. F., Hammond, R. H., and Beasley, M. R., J. Mater. Res. 6, p. 682 (1991).Google Scholar
3. Nakamura, K., Ye, J. and Ishii, A., Physica C 213, p. 1 (1993).Google Scholar
4. Ye, J. and Nakamura, K., Phys. Rev. B 48, p. 7554 (1993).Google Scholar
5. Ye, J. and Nakamura, K., Phys. Rev. B 50, p. 7099 (1994).Google Scholar
6. Ye, J. and Nakamura, K., Physica C 235–240, p. 581 (1994).Google Scholar
7. Ye, J. and Nakamura, K., Physica C 254, p. 113 (1995).Google Scholar
8. Nakamura, K. and Ogawa, K., J. J. Appl. Phys. 27, p. 577 (1988).Google Scholar