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Defect Structure of Cu-Rich and In-Rich Chalcopyrite CuInSe2 Films Grown on GaAS

Published online by Cambridge University Press:  21 February 2011

Olof Hellman ,
Shun-Ichiro Tanaka ,
Shigeru Niki  and
Paul Fons
Olof Hellman
Affiliation:
ERATO, JRDC, Yokohama Japan
Shun-Ichiro Tanaka
Affiliation:
ERATO, JRDC, Yokohama Japan
Shigeru Niki
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki, Japan
Paul Fons
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki, Japan
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Abstract

Using Transmission Electron Microscopy, we examine the defect structure of Cu-rich and In-rich CuInSe2 films grown by Molecular Beam Epitaxy on GaAs (100) substrates. A surprisingly high density of cation sublattice stacking faults on (001) planes are observed in the Cu-rich films. Because these stacking faults are extremely flat and extend thousands of Ångstroms over the surface, and because they are not observed in other, non-Cu-rich films, we argue that they are a consequence of a surface structural change during growth, induced by the excess Cu. Two other types of defects are also observed: near the CuInSe2/GaAs interface, there is a high concentration of dislocations, stacking faults and domain boundaries. In the In-rich films, stacking faults and twin-type defects on {112} planes extend throughout the thickness of the grown film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 467
Copyright
Copyright © Materials Research Society 1996

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References

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