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Defect Heterojunction Model for Anomalous Photoresponse of P/N GaAs Grown on N-Ge Substrates

Published online by Cambridge University Press:  25 February 2011

Larry Partain  and
Marc Grounner
Larry Partain
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303
Marc Grounner
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303
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Abstract

A GaAs p/n junction grown on a n-Ge substrate has an anomalous photoresponse that includes a quantum yield response starting at the 0.7-eV band edge of Ge. In terrestrial sunlight, its I-V characteristic has an anomalous “notched” shape that is progressively removed by increasing the infrared light content. The I-V is well modeled by a space-charge-limited-current diode theory with a GaAs/Ge interface defect density of 1.92 (1012) cm−2 eV−1 at 0.4 eV below the conduction band edge. Similar defect densities have been reported for GaAs/oxide interfaces and for a GaAs p/n junction interface specially selected for high defect densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 403
Copyright
Copyright © Materials Research Society 1989

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