Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-24T14:02:54.935Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization of Amorphous Silicon and Dopant Activation using Xenon Flash-Lamp Annealing (FLA)

Published online by Cambridge University Press:  21 July 2014

T. Mudgal ,
C. Reepmeyer ,
R. G. Manley ,
D. Cormier  and
K.D. Hirschman
T. Mudgal
Affiliation:
Electrical & Microelectronic Engineering Department, Rochester Institute of Technology, Rochester, New York, 14623, USA
C. Reepmeyer
Affiliation:
Electrical & Microelectronic Engineering Department, Rochester Institute of Technology, Rochester, New York, 14623, USA
R. G. Manley
Affiliation:
Corning Incorporated, Science and Technology, Corning, New York, 14870, USA
D. Cormier
Affiliation:
Industrial & Systems Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
K.D. Hirschman
Affiliation:
Electrical & Microelectronic Engineering Department, Rochester Institute of Technology, Rochester, New York, 14623, USA
Get access

Abstract

Flash-lamp annealing (FLA) has been investigated for the crystallization of a 60 nm amorphous silicon (a-Si) layer deposited by PECVD on display glass. Input factors to the FLA system included lamp intensity and pulse duration. Conditions required for crystallization included use of a 100 nm SiO2 capping layer, and substrate heating resulting in a surface temperature ∼ 460 °C. An irradiance threshold of ∼ 20 kW/cm2 was established, with successful crystallization achieved at a radiant exposure of 5 J/cm2, as verified using variable angle spectroscopic ellipsometry (VASE) and Raman spectroscopy. Nickel-enhanced crystallization (NEC) using FLA was also investigated, with results suggesting an increase in crystalline volume. Different combinations of furnace annealing and FLA were studied for crystallization and activation of samples implanted with boron and phosphorus. Boron activation demonstrated a favorable response to FLA, achieving a resistivity ρ < 0.01 Ω•cm. Phosphorus activation by FLA resulted in a resistivity ρ ∼ 0.03 Ω•cm.

Keywords

polycrystalSiXe
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a17-05
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ohdaira, K., Fujiwara, T., Endo, Y., Nishizaki, S. and Matsumura, H., J. Appl. Phys., 106, 044907 (2009).CrossRefGoogle Scholar
Ohdaira, K. and Matsumura, H., Journal of Crystal Growth, 362, 149 (2013).CrossRefGoogle Scholar
Saxena, S., Kim, D. C., Park, J. H. and Jang, J., IEEE Electron Device Letters, 31, 1242 (2010).Google Scholar
Jin, Z. H., Bhat, G. A., Yeung, M., Kwok, H. S. and Wong, M., J. Appl. Phys., 84, 194 (1998).CrossRefGoogle Scholar
Li, Q., Mudgal, T., Meller, P. M., Slavin, S., Manley, R. G. and Hirschman, K. D., MRS Online Proceedings Library, 1426, 281 (2012).CrossRefGoogle Scholar