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Computer Simulation Study of the Effect of Defects on Switching in Ferroelectric Thin Films
Published online by Cambridge University Press: 16 February 2011
Abstract
A new computational method for simulating the dynamics of switching in ferroelectric materials is presented. The new method is shown to be more realistic for dynamic simulations and computationally more efficient than the traditional Monte Carlo method. The method is used to investigate the effect of polar defects on switching behavior. The results are in qualitative agreement with experimental observations of fatigue.
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- Copyright © Materials Research Society 1990
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