Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T09:44:19.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Solution Processing of Strontium Bismuth Tantalate Films

Published online by Cambridge University Press:  10 February 2011

C.D.E. Lakeman  and
T. J. Boyle
C.D.E. Lakeman
Affiliation:
Texas Instruments, Inc., P.O. Box 655012, Mail Stop 921, Dallas TX 75265 (Current Address TPL Inc., 3921 Academy Parkway North, NE, Albuquerque, NM 87109)
T. J. Boyle
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, 1001 University Blvd., SE, Albuquerque, NM 87106
Get access

Abstract

We describe Chemical Solution Deposition (CSD) processes by which Strontium Bismuth Tantalate (SBT) thin films can be prepared at temperatures as low as 550°C. In this paper, we will present strategies used to optimize the properties of the films including solution chemistry, film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under suitable conditions, ∼1700 Å films can be prepared which have a large switchable polarization (2Pr >10μC/cm2), and an operating voltage, defined as the voltage at which 0.80 × 2Prmax is switched, 2.OV. We also describe an all-alkoxide route to SBT films from which SBT can be crystallized at 550°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 259
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See for example, Ferroelectric Thin Films IV and V, Mater. Res. Soc. Symp. Proc., 361 and 433, (1995, and 1996).Google Scholar
2. See also, Proc. IX ISIF, Santa Fe, NM, March 3 - 5, 1997, Eds. Dimos, D.B., and Tuttle, B.A., in Integrated Ferroelectrics, 17, 18, (1997).Google Scholar
3. Jones, R.E., Zurcher, P., Chu, P., Taylor, D.J., Lii, Y.T., Jiang, B., Maniar, P.D., and Gillespie, S.J., Microelectronic Engineering, 29, 3, (1995).Google Scholar
4. Al-Shareef, H.N., Dimos, D., Boyle, T.J., Warren, W.L., and Tuttle, B.A., Appl. Phys. Lett., 68, 690, (1996).Google Scholar
5. Noguchi, T., Hase, T., and Miyasaka, Y., Jpn. J. Appl. Phys., 35, 4900, (1996).Google Scholar
6. Boyle, T.J., Buchheit, C.D., Rodriguez, M.A., Al-Shareef, H.N., Hernandez, B.A., Scott, B., and Ziller, J.W., J Mater. Res., 11, 2274, (1996).Google Scholar
7. Amanuma, K., Hase, T., and Miyasaka, Y., in Ferroelectric Thin Films IV, Mater. Res. Soc. Symp. Proc., 361, 21, (1995).Google Scholar
8. Boyle, T.J. US Patent 5 683 614, (1997).Google Scholar
9. Koiwa, I., Tani, K., Mita, J., Iwabuchi, T., Jpn. J. Appl. Phys, 37, 192, (1998).Google Scholar
10. Lakeman, C.D.E., Boyle, T.J., Ruffner, J.A., J. of Sol-Gel Sci., In Press, (1998).Google Scholar
11. A patent application by Lakeman, C.D.E. and Boyle, T.J. has been filed by Texas Instruments on this process (1998).Google Scholar
12. Noguchi, T., Hase, T., and Miyasaka, Y., Integrated Ferroelectrics, 17, 57, (1997).Google Scholar
13. Spierings, G.A.C.M., Dormans, G.J.M., Moors, W.G.J., Ulenaers, M.J.E., and Larsen, P.K., J. Appl. Phys., 78, 1926, (1995).Google Scholar
14. Noguchi, T., Hase, T., Miyasaka, Y., Jpn. J. Appl Phys. Part 1, 9B, 4900, (1996)Google Scholar
15. Watanabe, K., Tanaka, M., Nagel, N., Katori, K., Sugiyama, M., Yamamoto, H., and Yagi, H., Integrated Ferroelectrics, 17, 451, (1997).Google Scholar