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Chemical and Ion Beam Etch Studies of Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

P. A. Lester ,
R. Singh ,
D.A. Rice ,
R. N. Pangborn ,
S. Ashok  and
S. J. Fonash
P. A. Lester
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802
R. Singh
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802
D.A. Rice
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802
R. N. Pangborn
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802
S. Ashok
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802
S. J. Fonash
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802
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Abstract

MS and MIS solar cell performance as a function of wet chemical etching history has been studied and correlated with lattice strain obtained from x-ray double-crystal diffraction technique and intragranular surface topography. Dry ion beam etching from a Kaufman ion source is found to damage the surface and radically alter the electrical barrier by introducing donor-like states in the damaged region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 199
Copyright
Copyright © Materials Research Society 1982

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References

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