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Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE
Published online by Cambridge University Press: 01 February 2011
Abstract
A newly reported narrow bandgap for indium nitride means that the indium gallium nitride system of alloys can be a candidate for new high efficiency solar cells covering most of the solar spectrum. In this paper, n-InN films were grown on p-Si (100) substrates. We characterize, for the first time, photovoltaic properties using n-InN/p-Si hetero-junction grown by RF-MBE.
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- Copyright © Materials Research Society 2004