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Channel Reliability in MOSFETs with Gate Oxide Grown using ECR Plasma of O2/He

Published online by Cambridge University Press:  01 February 2011

Vishwas Jaju  and
Vikram Dalal
Vishwas Jaju
Affiliation:
[email protected], Iowa State University, Electrical and Computer Engr., Coover Hall, Ames, IA, 50011, United States
Vikram Dalal
Affiliation:
[email protected], Iowa State University, Electrical and Computer Engr., Coover Hall, Ames, IA, 50011, United States
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Abstract

In this paper we present the channel degradation properties of MOSFET with gate oxide grown using electron cyclotron resonance (ECR) plasma. Si was oxidized using ECR plasma of 10% O2/He at 450°C for 60 min. MOS and MOSFETs devices were fabricated, using ECR grown oxide as a gate oxide, to evaluate the electrical properties. We found that the n-MOSFET with ECR as-grown oxide shows poorer channel degradation properties, by approximately two orders of magnitude, compared to channel with thermally grown (at 950°C) dry oxide. When as-grown oxide was annealed at much higher temperature (~800oC), channel resistance for the hot carriers improved and became comparable to that of the thermally grown oxide. We have shown that because of the lower processing temperatures used during oxidation strain is present in the bulk oxide and also at Si-SiO2 interface. Annealing at higher temperature can relieve strain and this assumption was found be self consistent with the infrared absorption study.

Keywords

Sidielectricoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A05-09
Copyright
Copyright © Materials Research Society 2007

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