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CdS and CdTe Large Area Thin Films Processed by Radio-Frequency Planar-Magnetron Sputtering*

Published online by Cambridge University Press:  21 March 2011

H. Hernández-Contreras ,
G. Contreras-Puente ,
J. Aguilar-Hernández ,
A. Morales-Acevedo ,
J. Vidal-Larramendi  and
O. Vigil-Galan
H. Hernández-Contreras
Affiliation:
Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, UPALM 07738Mexico, D. F.
G. Contreras-Puente
Affiliation:
Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, UPALM 07738Mexico, D. F.
J. Aguilar-Hernández
Affiliation:
Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, UPALM 07738Mexico, D. F.
A. Morales-Acevedo
Affiliation:
Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, UPALM 07738Mexico, D. F.
J. Vidal-Larramendi
Affiliation:
Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, UPALM 07738Mexico, D. F.
O. Vigil-Galan
Affiliation:
Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, UPALM 07738Mexico, D. F.
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Abstract

The processing of large area thin films solar cells represents a challenge, mainly due to the need for optimal setting of the critical growth parameters for scaling-up of the processes that guarantee homogeneous properties in the sub-minimodule architecture. We have been working with a Radio-Frequency Planar Magnetron Sputtering (RF-PMS) system, processing 450 cm2 areas of CdS and CdTe thin films grown on soda lime glasses and conducting glasses (SnO2:F-7ω/ ) for CdS, using for it a 6” balanced gun. The films have been processed with substrate temperatures (Ts) of 250°C, Ar chamber-pressure of 20 mTorr, and radio frequency power of 300 watts. The films were characterized by morphological, optical and electrical techniques, presenting in this work the corresponding measurements. Our results show that the better polycrystalline perfection, adherence and pinhole free films are obtained at substrate temperatures of 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.5
Copyright
Copyright © Materials Research Society 2001

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Footnotes

(1)

Permanent address: Departamento de Ingeniería Eléctrica, CINVESTAV del IPN, Mexico, D. F.

(2)

Permanent address: Facultad de Física-IMRE, Universidad de la Habana, 10400, Cd. Habana Cuba.

*

Work partially supported by CONACyT-México

References

REFERENCES

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