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Capacitance-Voltage, Current Voltage, and Thermal Stability of Copper Alloyed With Aluminum or Magnesium

Published online by Cambridge University Press:  10 February 2011

T. Suwwan de Felipe ,
S. P. Murarka ,
S. Bedell  and
W. A. Lanford
T. Suwwan de Felipe
Affiliation:
CIEEM and Dept. of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy, NY 1280
S. P. Murarka
Affiliation:
CIEEM and Dept. of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy, NY 1280
S. Bedell
Affiliation:
Dept. of Physics, State University of New York at Albany, Albany, NY 12222
W. A. Lanford
Affiliation:
Dept. of Physics, State University of New York at Albany, Albany, NY 12222
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Abstract

Copper alloyed with small amounts of aluminum or magnesium has recently been suggested as a promising material for interconnect applications in silicon integrated circuits. This work reports the results of the investigation of the electrical (capacitance-voltage and current-voltage) stability of the metal-oxide-semiconductor capacitor made with copper-0.5 at. % aluminum and copper-2 at. % magnesium as metal, deposited on thermally oxidized silicon substrates. Effect of thermal treatment in vacuum ambient before and/or during the electrical testing was investigated. The resistance to oxidation of these alloys was also investigated. The results show that copper magnesium, after a thermal treatment of 350°C or higher, produces a passivating layer at the interfaces that has excellent corrosion resistance and very stable behavior in terms of capacitance-voltage and current-voltage measurements. Copper aluminum performed adequately, much better than pure copper but was inferior to copper magnesium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 263
Copyright
Copyright © Materials Research Society 1998

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References

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