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Calculated Properties of Carbon Defects in Silicon
Published online by Cambridge University Press: 16 February 2011
Abstract
The energies of carbon defects in silicon have been calculated, using an empirical classical potential, and used to infer defect properties and reactions. The results accord well with a variety of experimental data, including defect structures, activation energies for defect motion, and coupling to strain.
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- Copyright © Materials Research Society 1990