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Bottom Contact Ambipolar Organic Thin Film Transistors Based on C60/Pentacene Heterostructure

Published online by Cambridge University Press:  26 February 2011

Kaname Kanai
Affiliation:
[email protected], Nagoya University, Chemistry, Furo-cho, Chikusa-ku, Nagoya, 464-8602, Japan, +81-52-789-3657, +81-52-789-2944
Suidong Wang
Affiliation:
[email protected], Nagoya University, Nagoya, 464-8602, Japan
Kazuhiko Seki
Affiliation:
[email protected], Nagoya University, Nagoya, 464-8602, Japan
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Abstract

We report the fabrication and characterization of the bottom contact organic thin film transistors and inverter based on a heterostructure of C60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm2V−1s−1 and 0.14 cm2V−1s−1, respectively. After exposure to air, the n-channel in C60 is completely degraded whereas the p-channel in pentacene keeps working. Both the n-channel and the p-channel are stable in N2 atmosphere. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. These results suggest a potential way to fabricate organic complementary circuits with a single organic heterostructure device.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Dimitrakopoulos, C.D., Malenfant, P. R. L., Adv. Mater. 14 99 (2002).Google Scholar
2. Crone, B., Dodabalapur, A., Lin, Y.Y., Filas, R.W., Bao, Z., LaDuca, A., Sarpeshkar, R., Katz, H.E., Li, W., Nature 403 521 (2000).Google Scholar
3. Tapponnier, A., Biaggio, I., Günter, P., Appl. Phys. Lett. 86 112114 (2005).Google Scholar
4. Lin, Y.Y., Gundlach, D.J., Nelson, S.F., Jackson, T.N., IEEE Electr. Device Lett. 18 606 (1997).Google Scholar
5. Dodabalapur, A., Laquindanum, J., Katz, H.E., Bao, Z., Appl. Phys. Lett. 69 4227 (1996).Google Scholar
6. Kanbara, T., Shibata, K., Fujiki, S., Kubozono, Y., Kashino, S., Urisu, T., Sakai, M., Fujiwara, A., Kumashiro, R., Tanigaki, K., Chem. Phys. Lett. 379 223 (2003).Google Scholar
7. Inoue, Y., Sakamoto, Y., Suzuki, T., Kobayashi, M., Gao, Y., Tokito, S., Jpn. J. Appl. Phys. 44 3663 (2005).Google Scholar
8. Dodabalapur, A., Katz, H.E., Torsi, L., Haddon, R.C., Science 269 1560 (1995).Google Scholar
9. Dodabalapur, A., Katz, H.E., Torsi, L., Haddon, R.C., Appl. Phys. Lett. 68 1108 (1996).Google Scholar
10. Rost, C., Gundlach, D.J., Karg, S., Riess, W., J. Appl. Phys. 95 5782 (2004).Google Scholar
11. Wang, J., Wang, H.B., Yan, X.J., Huang, H.C., Yan, D.H., Chem. Phys. Lett. 407 87 (2005).Google Scholar
12. Kuwahara, E., Kubozono, Y., Hosokawa, T., Nagano, T., Masunari, K., Fujiwara, A., Appl. Phys. Lett. 85 4765 (2004).Google Scholar
13. Kuwahara, E., Kusai, H., Nagano, T., Takayanagi, T., Kubozono, Y., Chem. Phys. Lett. 413 379 (2005).Google Scholar
14. Ishii, H., Sugiyama, K., Ito, E., Seki, K., Adv. Mater. 11 605 (1999).Google Scholar
15. Amy, F., Chan, C., Kahn, A., Org. Electron. 6 85 (2005).Google Scholar
16. Veenstra, S.C., Heeres, A., Hadziioannou, G., Sawatzky, G.A., Jonkman, H.T., Appl. Phys. A 75 661 (2002).Google Scholar
17. Kymissis, I., Dimitrakopoulos, C.D., Purushothaman, S., IEEE Trans. Electron Devices 48 1060 (2001).Google Scholar
18. Haddon, R.C., Perel, A.S., Morris, R.C., Palstra, T.T.M., Hebard, A.F., Fleming, R.M., Appl. Phys. Lett. 67 121 (1995).Google Scholar