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Blistering and Splitting in Hydrogen-implanted Silicon
Published online by Cambridge University Press: 01 February 2011
Abstract
We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μm according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.
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- Copyright © Materials Research Society 2005
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