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Avalanche Multiplication of Photo-Generated Carriers in Amorphous Semiconductor, and its Application to Imaging Device

Published online by Cambridge University Press:  26 February 2011

Y. Takasaki ,
K. Tsuji ,
T. Hirai ,
E. Maruyama ,
K. Tanioka ,
J. Yamazaki ,
K. Shidara  and
K. Taketoshi
Y. Takasaki
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
K. Tsuji
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
T. Hirai
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
E. Maruyama
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
K. Tanioka
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
J. Yamazaki
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
K. Shidara
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
K. Taketoshi
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
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Abstract

It has been confirmed that avalanche multiplication occurs in amorphous semiconductors, especially in amorphous selenium. The obtained hole and electron ionization rates, β and α, have single exponential dependence on the reciprocal electric field. This phenomenon has been successfully applied for the first time to a highly-sensitive image-pickup tube with quantum efficiency as high as 10. This avalanche vidicon has excellent S/N characteristics. This may be due to the large ratio of hole to electron ionization rates from the shot noise analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 387
Copyright
Copyright © Materials Research Society 1988

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References

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