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Atomic Layer Epitaxy
Published online by Cambridge University Press: 28 February 2011
Abstract
Atomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.
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- Copyright © Materials Research Society 1990
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