Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T00:48:12.080Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Deep Levels in GaAs Detector Diodes Using Impedance Spectroscopy

Published online by Cambridge University Press:  21 February 2011

C Eiche ,
M Fiederle ,
J Weese ,
D Maier ,
D Ebling ,
J Ludwig  and
K W Benz
C Eiche
Affiliation:
Kristallographisches Institut, University of Freiburg, 7800 Freiburg, Germany
M Fiederle
Affiliation:
Freiburger Materialforschungszentrum, University of Freiburg, 7800 Freiburg, Germany
J Weese
Affiliation:
Freiburger Materialforschungszentrum, University of Freiburg, 7800 Freiburg, Germany
D Maier
Affiliation:
Freiburger Materialforschungszentrum, University of Freiburg, 7800 Freiburg, Germany
D Ebling
Affiliation:
Freiburger Materialforschungszentrum, University of Freiburg, 7800 Freiburg, Germany
J Ludwig
Affiliation:
Kristallographisches Institut, University of Freiburg, 7800 Freiburg, Germany
K W Benz
Affiliation:
Kristallographisches Institut, University of Freiburg, 7800 Freiburg, Germany
Get access

Abstract

Impedance or admittance spectroscopy has been shown to be a very convenient tool for the investigation of deep levels in semiconductor junctions. At constant temperature a frequency sweep is performed. After that the impedance signal is analysed by a regularization method based on Tikhonov regularization in order to obtain the thermal relaxation times of the deep levels present in the junction. The high resolution of the regularization method in comparison to conventional techniques is demonstrated using simulated data. The temperature dependence of the thermal relaxation times provides information about the properties of the deep levels such as activation energy or capture cross section. Two donor levels with activation energies dE1 =0.58 eV and dE2 =0.68 eV are observed in our detector diodes. It can be shown that the concentration of level 2 is increased after irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 375
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Roberts, G.I. and Crowell, C.R., J. Appl. Phys. 41, 1767 (1970)Google Scholar
2. Macdonald, J.R., Impedance Spectroscopy Emphasizing Solid Materials and Systems, (Wiley&Sons, New York, 1987)Google Scholar
3. Pautrat, J.L., Katiricioglu, B., Magnea, N., Bensahel, D., Pfister, J.C. and Revoil, L., Solid-State Electron. 23, 1159 (1980)Google Scholar
4. Vincent, G., Bois, D., and Pinard, P., J.Appl.Phys. 46, 5173 (1975)Google Scholar
5. Tokuda, Y. and Usami, A., J. Appl. Phys. 48, 1668 (1977)Google Scholar
6. Morozov, V.A., Methods for Solving Incorrectly Posed Problems, (Springer, Berlin, 1984)Google Scholar
7. Groetsch, C.W., The Theory of Tikhonov Regularization for Fredholm Equations of the First Kind, (Pitman, Londond, 1984)Google Scholar
8. Provencher, S.W., Comput. Phys. Commun. 27, 213 (1982)CrossRefGoogle Scholar
9. Weese, J., Comput. Phys. Commun. 69, 99 (1992)Google Scholar
10. Benz, K.W. et al. , Nucl. Instr. and Meth. A322, 493 (1992)Google Scholar
11. Martin, G.M., Mitonneau, A. and Mircea, A., Electron. Lett 13, 191 (1977)Google Scholar
12. Johnson, E.T., Kafalas, J.A., and Davies, R.W., J. Appl. Phys. 54, 204 (1983)CrossRefGoogle Scholar