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Amorphous Silicon-Carbon alloys Deposited by Electron-Cyclotron Resonance PECVD

Published online by Cambridge University Press:  10 February 2011

V. Chu  and
J. P. Conde
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores (INESC), Rua Alves Redol, 9, 1000 Lisbon, Portugal
J. P. Conde
Affiliation:
Department of Physics, Instituto Superior Técnico (IST), Av. Rovisco Pais, 1096 Lisboa Codex, Portugal
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Abstract

Hydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical-vapor deposition. Hydrogen is used as the excitation gas in the resonance chamber while silane and methane (or ethylene) are introduced in the main chamber. A minimum of 95% hydrogen dilution is used. The microwave power is kept constant at 150 W. The effect of the type of carbon source gas, silane to carbon source gas ratio, deposition pressure, substrate temperature and hydrogen dilution on the deposition rate, bandgap and Urbach energy are studied. The photoconductivity and the Urbach energy of the ECR-deposited films are compared to those prepared with glow discharge with the same bandgap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 381
Copyright
Copyright © Materials Research Society 1996

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