No CrossRef data available.
Article contents
Advantages of MIS Processing on Passivated Polycrystalline Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Wacker polycrystalline silicon shows enhanced grain boundary activity after a high temperature (950° C) anneal. It is possible to passivate this effect in a hydrogen plasma. The low temperature (600° C) processing of MIS technology does not activate grain boundaries or deteriorate a passivated specimen. Activated grain boundaries with MIS structures can be used to assess the character of recombination currents. It is concluded that MIS processing is advantageous for passivated polycrystalline silicon.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1982