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Absolute Pressure Derivatives of Deep Level Defects in III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

D. D. Nolte ,
W. Walukiewicz  and
E. E. Hailer
D. D. Nolte
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, 94720
W. Walukiewicz
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, 94720
E. E. Hailer
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and University of California, Berkeley, 94720
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Abstract

Based on transition metal reference levels, we present absolute pressure derivatives for band-edges in GaAs and InP and defects in GaAs. The defect deformation potentials are directly related to the electron-lattice coupling which drives lattice relaxation around the defects. We find an exceedingly large inward lattice relaxation of the EL2 defect in GaAs upon electron emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 423
Copyright
Copyright © Materials Research Society 1988

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References

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