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Transverse Electrical Transport in Pentacene Photodiodes

Published online by Cambridge University Press:  01 February 2011

Cristobal Voz
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
Joaquim Puigdollers
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
Marta Fonrodona
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
Isidro Martin
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
Albert Orpell
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
Michael Vetter
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
Francisco Fabregat
Affiliation:
Departament de Ciencies Experimentals, Universitat Jaume I, Campus Riu Sec, Castelló de la Plana E-12080, Spain
Germa Garcia
Affiliation:
Departament de Ciencies Experimentals, Universitat Jaume I, Campus Riu Sec, Castelló de la Plana E-12080, Spain
Juan Bisquert
Affiliation:
Departament de Ciencies Experimentals, Universitat Jaume I, Campus Riu Sec, Castelló de la Plana E-12080, Spain
Ramon Alcubilla
Affiliation:
Departament d'Enginyeria Electronica, Universitat Politecnica de Catalunya, Campus Nord, Barcelona E-08034, Spain
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Abstract

The microstructure of pentacene thin films deposited by thermal evaporation is studied by X-ray diffraction. The transmittance of these films evidences different molecular orbital levels and their related excitonic states. Pentacene photodiodes have been also fabricated on ITO-coated glass substrates with aluminium top electrodes. The current voltage characteristics of such devices are discussed paying special attention to the strongly marked space-charge limited regime. This has been related to trapping in an exponential distribution of localised states in the gap of pentacene. The analysis of the characteristic offers valuable information about such distribution of traps. Finally, the external-quantum-efficiency of these photodiodes shows antibatic features, which evidence the importance of excitonic states in the photovoltaic conversion in pentacene.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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