Published online by Cambridge University Press: 11 February 2011
On the basis of both experimental and theoretical studies, a simple quasi-thermodynamic model of surface kinetics is suggested for Hydride Vapor Phase Epitaxy (HVPE) of GaN, working in a wide range of growth conditions. Coupled with detailed 3D modeling of species transport in a horizontal reactor, the model provides quantitative predictions for the GaN growth rate as a function of process parameters. Significance of transport effects on growth rate uniformity is demonstrated.