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Theoretical Analysis of a Si/SiGe Hemt Structure

Published online by Cambridge University Press:  28 February 2011

C Smith  and
M E Jones
C Smith
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, IPSWICH, UK
M E Jones
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, IPSWICH, UK
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Abstract

An analysis has been made of a Si/SiGe HEMT structure, grown on a (001) oriented substrate, by adapting an existing model for III–V HEMT's. Strain plays a critical role in the behaviour of these SiGe structures by separating the degenerate conduction band minimum into 2- and 4- fold symmetric minima. This effect has been incorporated into a ID solution of Poisson's equation in the device structure. The effects of strain, Schottky barrier height, layer width and doping density on both enhancement and depletion mode HEMT properties are all considered. In addition initial estimates of the effect of strain on electron mobility are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 277
Copyright
Copyright © Materials Research Society 1987

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References

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