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TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

Published online by Cambridge University Press:  03 September 2012

W.L. Sarney ,
L. Salamanca-Riba ,
V. Ramachandran ,
R.M Feenstra  and
D.W. Greve
W.L. Sarney
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
L. Salamanca-Riba
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
V. Ramachandran
Affiliation:
Dept. of Physics, Carnegie Mellon University, Pittsburgh, PA
R.M Feenstra
Affiliation:
Dept. of Physics, Carnegie Mellon University, Pittsburgh, PA
D.W. Greve
Affiliation:
Dept. of Computer & Electrical Engineering, Carnegie Mellon University, Pittsburgh, PA
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Abstract

GaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.47
Copyright
Copyright © Materials Research Society 1999

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References

[1] Davis, R.F., Weeks, T.W., Bremser, M.D., Tanaka, S., Kern, R.S., Sitar, Z., Ailey, K.S., Perry, W.G., and Wang, C., Mater.Res.Soc.Symp.Proc. 395, 3 (1996).Google Scholar
[2] Ramachandran, V., Brady, M.F., Smith, A.R., Feenstra, R.M., Greve, D.W., J. Elec. Mat.. 27, 308 (1998).Google Scholar
[3] Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Ptak, A., Myers, T.H., Sarney, W.L., Salamanca-Riba, L., Shin, M.-S., Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).Google Scholar
[4] Williams, D. & Carter, C., Transmission Electron Microscopy, Plenum Press, New York: 1996, p. 361.Google Scholar
[5] Ramachandran, V., Feenstra, R.M., Sarney, W.L., Salamanca-Riba, L., Northrup, J.E., Romano, L.T., Greve, D.W., Appl. Phys. Lett. 75, (1999), 808.Google Scholar
[6] Ramachandran, V., Feenstra, R.M., W.L.Sarney, L. Salamanca-Riba, Greve, D.W., submitted to the proceedings of the 46th International Symposium of the American Vacuum Society, to appear in J. Vac. Sci. Technol. A.Google Scholar
[7] Ramachandran, V., Smith, A.R., Feenstra, R.M., and Greve, D.W., J. Vac. Sci. Technol. A. 17, 1289 (1999).Google Scholar