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Synthesis of InGaZnO4 Colloids and Its Application in a TFT Device

Published online by Cambridge University Press:  15 March 2011

Chen-Yu Kao ,
Kan-Sen Chou ,
Y.H. Yang  and
S.S. Yang
Chen-Yu Kao
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013
Kan-Sen Chou
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013
Y.H. Yang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013
S.S. Yang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013
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Abstract

The deposition of amorphous InGaZnO4 (a-IGZO) semiconductor film, via a sputtering process, has been demonstrated in the literature. In this paper, we present a solution method as an alternative to obtain this semiconducting film. The dispersible IGZO colloids is formed first by co-precipitation of precursors, followed by hydrothermal treatment at 200°C for 1 hour and using CMC as the dispersion agent. The crystalline colloid would become amorphous when it was heated at above 250°C. The TFT structure was made by growing a dielectric silica layer using the CVD method, a metal layer using the sputtering method, and an active IGZO layer using the solution method. This device exhibits low operating voltage, the mobility is about 2cm2V−1s−1 and the Ion/Ioff ratio is 104. Further improvement in processing is needed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1113: Symposium F – Low-Cost Solution-Based Deposition of Inorganic Films for Electronic/Photonic Devices , 2008 , 1113-F09-01
Copyright
Copyright © Materials Research Society 2009

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References

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