Hostname: page-component-788cddb947-2s2w2 Total loading time: 0 Render date: 2024-10-15T10:21:55.326Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Structure and Morphology Modification of Silicon Layers Induced by Nanosecond Pulsed Laser Irradiation

Published online by Cambridge University Press:  10 February 2011

A. Demchuk
A. Demchuk*
Affiliation:
Department of Microelectronics, Minsk Radioengineering Institute, P. Brovka 6, Minsk 220600, Belarus
Get access

Abstract

The results of laser induced surface structure modifications utilizing time-resolved reflectivity measurements are presented for the pulsed laser irradiation (λ. = 1.06 μm and 0.53 μm) of thin polysilicon (poly-Si) layers of 0.1 μm, 0.45 μm and 1.0 μm in thickness on silicon substrates. It was shown that when the poly-Si layer of 0.1-0.45 thickness is totally molten, during a solidification, a large-grained structure having grain sizes exceeding the thickness of the molten Si layer is formed. At the same time, the time-resolved reflectivity changes its value nonmonotonically. This nonmonotonic behavior is due to the outcropping of growing grains onto the surface before the formation of a solid crystalline front as well as to the influence of the surface phenomena on the crystallization process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 627
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Campisano, S.U., Jacobson, D.C., and Poate, J.M., Appl. Phys. Lett. 46, 846 (1985).Google Scholar
2. Bruines, J.J.P., Hal, R.P.M. van, Boots, H.M.J., Sinke, W., and Saris, F.W., Appl. Phys. Lett. 48, 1259 (1986).Google Scholar
3. Lowndes, D.H., Jellison, G.E. Jr., Pennycook, S.J., Withrow, S.P., and Mashburn, D.N., Appl. Phys. Lett. 48, 1389 (1986).Google Scholar
4. Batishche, S.A., Demchuk, A.V., Kuz'muk, A.A., Labunov, V.A., Mostovnikov, V.A. and Tatur, G.A., Appl. Phys. A 50, 321 (1990).Google Scholar
5. Stiffer, S.R., Thompson, M.O., Peercy, P.S., Phys. Rev. B, 43, 9851 (1991).Google Scholar
6. Pristrem, A.M., Demchuk, A.V., Danilovich, N.I., Zh. Tekh. Fiz. 56, 1220 (1986) [Sov. Phys. Tech. Phys. 31, 717 (1986)].Google Scholar
7. Demchuk, A.V. and Labunov, V.A., Zh. Tekh. Fiz. 59, 146 (1989) [Sov. Phys. Tech. Phys. 34, 1320 (1989)].Google Scholar
8. Demchuk, A. and Labunov, V., Appl. Surf. Sci. 86, 353 (1995).Google Scholar
9. Cole, J.M., Humphreys, P. and Earwaker, L.G., Vacuum 34, 871 (1984).Google Scholar
10. Unamuno, S. De and Fogarassy, E., Appl. Surf. Sci. 36, 1 (1989).Google Scholar
11. Jellison, G.E. and Modine, F.A., Phys. Rev. B 27, 7466 (1983).Google Scholar