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Suppression of Ferromagnetic Ordering in thicker co-sputtered Mn doped MgO Films

Published online by Cambridge University Press:  13 May 2013

Sreekanth K. Mahadeva
Affiliation:
Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden Department of Physics, Amrita Vishwa Vidyapeetham University, Amritapuri Campus, Kollam, 690 525, Kerala, India
Zhi-Yong Quan
Affiliation:
Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, Shanxi Normal University, Linfen, 041004, China
J. C. Fan
Affiliation:
Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden School of Materials and Engineering, Anhui University of Technology, Maanshan, 243002, China
K. S. Sreelatha
Affiliation:
Department of Physics, Amrita Vishwa Vidyapeetham University, Amritapuri Campus, Kollam, 690 525, Kerala, India Govt. Polytechnic College, Nattakom P O, Kottayam, 686 013, Kerala, India
L. Belova
Affiliation:
Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden
Roman Puzniak
Affiliation:
Govt. Polytechnic College, Nattakom P O, Kottayam, 686 013, Kerala, India
K. V. Rao
Affiliation:
Department of Materials Science, Royal Institute of Technology, Stockholm, SE100 44 Sweden
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Abstract

We report on preliminary studies of low (14 at.%) and high (53at.%) concentration Mn doped MgO films deposited by co-sputtering from metallic Mn and Mg targets. The structural, surface morphologies and magnetic properties of the films of different thickness were studied. All the as grown films are found to be amorphous and film surfaces are found to be flawless and homogeneous. We observe at room temperature robust ferromagnetic loops with a saturation magnetization value that is a function of film thickness reaching a maximum of ∼38.5 emu/cm3 in the Mn0.53Mg0.47O film at a thickness of ∼92 nm. In thicker films room-temperature ferromagnetic ordering is suppressed and eventually at a thickness around 120nm the expected diamagnetism of the bulk appears. The origin of ferromagnetism may be attributed to cation defects at the Mg-site.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Matsumoto, Y.. Science, 291, 854(2001).CrossRefGoogle Scholar
Fukumura, T., Jin, Z., Ohtomo, A., Koinuma, H., and Kawasaki, M.. Appl. Phys. Lett. 75, 3366 (1999).CrossRefGoogle Scholar
Narayan, J., Nori, S., Pandya, D. K., Avasthi, D. K., and Smirnov, A. I.. Appl. Phys. Lett. 93, 082507 (2008).CrossRefGoogle Scholar
Martínez-Boubeta, C., Beltrán, J. I., Balcells, L., Konstantinović, Z., Valencia, S., Schmitz, D., Arbiol, J., Estrade, S., Cornil, J., and Martínez, B.. Phys. Rev. B 82, 024405 (2010).CrossRefGoogle Scholar
Kumar, A., Kumar, J., and Priya, S.. Appl. Phys. Lett. 101, 082411 (2012).Google Scholar
Araujo, C. M., Kapilashrami, M., Xu, J., Jayakumar, O. D., Nagar, S., Wu, Y., Århammar, C., Johansson, B., Belova, L., Ahuja, R., Gehring, G. A., and Rao, K. V.. Appl. Phys. Lett. 96, 232505 (2010).CrossRefGoogle Scholar
Kapilashrami, M., Zhang, H., Fang, M., Li, X., Sun, X., Rao, K. V., Belova, L., Luo, Y., and Guo, J., Appl. Phys. Lett. 101, 082411 (2012)CrossRefGoogle Scholar
Kapilashrami, M., Xu, J., Ström, V., Rao, K. V., and Belova, L.. Appl. Phys. Lett. 95, 033104 (2009).CrossRefGoogle Scholar
Rao, C. N. R. and Raveau, B., Transition Metal Oxides, 2nd edn, Wiley-VCH, Germany (1995).Google Scholar
Ramachandran, S. and Narayan, J.. Appl. Phys. Lett. 90, 132511(2007).CrossRefGoogle Scholar
Ramachandran, S., Narayan, J., and Prater, J. T., Appl. Phys. Lett. 88, 242503(2006).CrossRefGoogle Scholar