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Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

Published online by Cambridge University Press:  01 February 2011

Manuel Villafuerte ,
Silvia P. Heluani ,
Gabriel Juárez ,
David Comedi ,
Gabriel Braunstein  and
Federico Golmar
Manuel Villafuerte
Affiliation:
[email protected], Universidad Nacional de Tucumán,, Física, Lab. de Física del Sólido, Av. Independencia 1800 Tucumán 4000, Argentina
Silvia P. Heluani
Affiliation:
[email protected], Universidad Nacional de Tucumán, Física, Lab. de Física del Sólido, Av. Independencia 1800, Tucumán, 4000, Argentina
Gabriel Juárez
Affiliation:
[email protected], Universidad Nacional de Tucumán, Física, Lab. de Física del Sólido, Av. Independencia 1800, Tucumán, 4000, Argentina
David Comedi
Affiliation:
[email protected], Universidad Nacional de Tucumán,, Física, Lab. de Física del Sólido, Av. Independencia 1800, Tucumán, 4000, Argentina
Gabriel Braunstein
Affiliation:
[email protected], Micron Technology, 9600 Godwin Drive, Manassas, VA, 20110, United States
Federico Golmar
Affiliation:
[email protected], Universidad de Buenos Aires, Lab. de Ablación Láser, Buenos Aires, 1000, Argentina
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Abstract

N-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films had the wurtzite structure, and were highly oriented along the c-axis direction. Au and Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a two-terminal structure in each case. The current-voltage characteristics of the two terminal structure, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.

Keywords

thin filmmetal-insulator transitionelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-06
Copyright
Copyright © Materials Research Society 2007

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