Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T15:42:03.144Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Slurry Composition Transition in a Rotary Copper CMP Process

Published online by Cambridge University Press:  01 February 2011

Sharath Hegde ,
Udaya B. Patri ,
Anurag Jindal  and
S.V. Babu
Sharath Hegde
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
Udaya B. Patri
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
Anurag Jindal
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
S.V. Babu
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
Get access

Abstract

The polishing pad is one of the prime components in a typical Chemical Mechanical Polishing (CMP) process. The structure and transport properties of a polishing pad are critical in determining the particle and chemical utilization in a conventional CMP process. Our earlier paper investigated the particle retention and transport on two different polishing pads, IC-1400 and Suba-500, during copper polishing. In this paper, the results of chemical retention and transport of IC-1400 and Suba-500 pads during copper polishing are presented. The polish rate results from slurry-step-flow experiments with H2O2-glycine based slurries, where the concentrations of chemicals in the slurry are altered in steps during polishing, are correlated to the chemical retention and transport characteristics of these pads. It is found that IC-1400 has a higher chemical transport capability than Suba-500 pad, which is shown to affect the polish rates of copper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F1.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gutmann, R. J. Stiegerwald, J. M. You, L. Price, D. T. Nierynck, J. Duquette, D. J. and Murarka, S. P. Thin Solid Films, 270, 596 (1995).Google Scholar
2. Stiegerwald, J. M. Murarka, S. P. Ho, J., Gutmann, R. J. and Duquette, D. J. J. Vac.Sci. Technol. B, 13, 2215 (1995).Google Scholar
3. Subramanian, R. S. Zhang, L. and Babu, S. V. J. Electrochem.Soc., 146(11), (1999).Google Scholar
4. Coppeta, J. Rogers, C. Philipossian, A. and Kaufman, F. B. Proc.VMIC Conference, Santa Clara, (1997).Google Scholar
5. Runnels, S. R. and Eyman, L. M. J.Electrochem. Soc., 141(6), (1994).Google Scholar
6. Philipossian, A. Rogers, C. and Lu, J. Proc. VMIC Conference, Santa Clara, (2001).Google Scholar
7. Jindal, A. Li, Y. Narayanan, S. and Babu, S. V. Mat. Res. Soc. Symp. Proc., Vol. 671, M4.10.1 (2001).Google Scholar
8. Li, Y. and Babu, S. V. Semiconductor Fabtech, 13, 259 (2001).Google Scholar