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Stress Effects on Al and Al(Cu) Thin Film Grain-Boundary Diffusion
Published online by Cambridge University Press: 10 February 2011
Abstract
Stress effects on grain-boundary diffusion in Al and Al(Cu) thin films are evaluated through atomistic simulations. Specifically, the grain-boundary vacancy formation and migration and interstitial migration energetics are obtained as a function of stress states in thin film. In general, the activation energies vary at a rate of 0.1 eV per 1.0 % strain at the grain boundary investigated, indicating the possible impact on electromigration phenomenon in these films.
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- Copyright © Materials Research Society 2000