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STM-REBIC study of nanocrystalline and crystalline silicon.

Published online by Cambridge University Press:  11 February 2011

E. Nogales ,
B. Méndez ,
J. Piqueras  and
R. Plugaru
E. Nogales
Affiliation:
Departamento. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, Spain.
B. Méndez
Affiliation:
Departamento. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, Spain.
J. Piqueras
Affiliation:
Departamento. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, Spain.
R. Plugaru
Affiliation:
Departamento. Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, Spain.
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Abstract

Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. The nc-Si films were obtained by boron implantation of amorphous silicon layers with an average nanocrystal size of about 10 nm. STM current constant images reveal a cell structure in the nc-Si films which was also revealed in the STM remote electron beam induced current (REBIC) images with a resolution of up to 20 nm. The contrast in the STM-REBIC images indicate the existence of space charge regions at the boundaries. The influence of the thermal treatment on the cell structure was studied. For comparison, SEM-REBIC and STM-REBIC images from c-Si wafer were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G7.6
Copyright
Copyright © Materials Research Society 2003

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References

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