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STM investigation of energetic insertion during direct ion deposition

Published online by Cambridge University Press:  21 March 2011

Joshua M. Pomeroy
Affiliation:
currently with Haldor Topsøe A/S, Denmark
Aaron Couture
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
Joachim Jacobsen
Affiliation:
currently with Haldor Topsøe A/S, Denmark
Barbara H. Cooper
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853USAdeceased August 1999
J.P. Sethna
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
Joel D. Brock
Affiliation:
Cornell Center for Materials Research, Clark Hall, Cornell University, Ithaca, NY 14853, USA
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Abstract

Thin copper films have been deposited on single crystal copper substrates and characterized using a UHV Scanning Tunneling Microscope to probe the effect of atomic insertions during hyperthermal ion deposition. At low temperatures, atomic insertions are predicted to provide a net downhill current that offsets the roughening effect due to uphill “Schwoebel” currents leading to a net smoothing of the surface. Films have been grown at several different energies targeted to observe a crossover from insertion driven smoothing to adatom-vacancy dominated roughening. Copper thin films are deposited near 20 eV using a mass selected ion deposition system that allows precise control (+/− 2 eV) over the energy of constituent atoms. Experimental observations are compared with a sophisticated Kinetic Monte Carlo and Molecular Dynamics hybrid (KMC-MD) simulation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1 Michely, T., Kalff, M., and Comsa, G. in Mechanisms and Principles of Epitaxial Growth in Metallic Systems, edited by Wille, T.; Burmester, C.; Terakura, K.; Comsa;, G. and Williams, E., (Mater. Res. Soc. Proc. 278, Warrendale, PA, 1998).Google Scholar
2 King, D. and Woodruff, D. (eds.), The Chemical Physics of Solid Surfaces Vol.8: Growth and Properties of Epitaxial Layers, (Elsevier, Amsterdam 1997).Google Scholar
3 Family, F. and Vicsek, T., J. Phys. A, 18 L75–L81 (1985).Google Scholar
4 Harper, J., Cuomo, J., Gambino, R., and Kaufman, H., in Ion Bombardment Modification of Surfaces: Fundamentals and Applications, edited by Auciello, O. and Kelly, R., (Elsevier, Amsterdam, 1984).Google Scholar
5 Rosenfeld, G., Lipkin, N., Wulfhekel, W., Kliewer, J., Morgenstern, K., Peolsema, B., and Comsa, G., Appl. Phys. A, 61 p.455, (1995); W. Wulfhekel, N. Lipkin, J. Kliewer, G. Rosenfeld, L. Jorritsma, B. Poelsema, and G. Comsa, Surf. Sci. 348 p. 277 (1996); B. Karr, Y. Kim, I. Petrov, D. Bergstrom, D. Cahill, J. Greene, L. Madsen, and J. Sundgren, J. Appl. Phys. 80 12 (15 Dec. 1996); T. Minvielle, R. White, and R. Wilson, J. Appl. Phys. 79 (8) 2750, (15 Apr. 1996).Google Scholar
6 Petrov, I., Adibi, F., and Greene, J., Appl. Phys. Lett. 63 (1) 36, (5 July 1993).Google Scholar
7 Jacobsen, J., Cooper, B.H., and Sethna, J.P., Phys. Rev. B, 58 15847 (15 Dec 1998).Google Scholar
8 Zhou, X. and Wadley, H., Surf. Sci. 430 5873, (1999).Google Scholar
9 Bott, M., Michely, T., and Comsa, G.; Surf. Sci. 272 161166 (1992).Google Scholar
10As calculated using energy barriers presented in Stolze (see below).Google Scholar
11 Stolze, P., J. Phys. Condens. Matter 6 9495, (1994).Google Scholar