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Stacking Fault Energies in TiCx

Published online by Cambridge University Press:  10 February 2011

R. M. Harris  and
P. D. Bristowe
R. M. Harris
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
P. D. Bristowe
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
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Abstract

We have used a Tight Binding model to calculate the surface energies of various (111) stacking faults in TiC1.0 and TiC0.5. Based upon our preliminary results we have identified the stable stacking faults and have examined possible dislocation dissociation reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 9
Copyright
Copyright © Materials Research Society 1997

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References

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