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Selective Growth of Diamond Films On Mirror-Polished Silicon Substrates
Published online by Cambridge University Press: 22 February 2011
Abstract
Polycrystalline diamond thin films have been selectively grown on mirror-polished silicon substrates using bias-enhanced microwave plasma chemical vapour deposition (MPCVD) to increase diamond nucleation density. A slight etching of Si02 mask was employed after the nucleation treatment to remove the diamond nuclei on the mask. Perfect diamond patterns with smooth surface (particle size <0.5µm) and sharp boundaries were obtained. The diamond film gears with 400µm in diameter and 5µm in thickness were first fabricated by this technique.
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- Copyright © Materials Research Society 1994
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