Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-24T14:05:00.924Z Has data issue: false hasContentIssue false
  • English
  • Français

Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

Published online by Cambridge University Press:  26 February 2011

Nobuya Hiroshiba ,
Ryotaro Kumashiro ,
Taishi Takenobu ,
Naoya Komatsu ,
Yusuke Suto ,
Yoshihiro Iwasa ,
Kenta Kotani ,
Iwao Kawayama ,
Masayoshi Tonouchi  and
Katsumi Tanigaki
Nobuya Hiroshiba
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan, +91-22-795-6468, +91-22-795-6470
Ryotaro Kumashiro
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Taishi Takenobu
Affiliation:
[email protected], Tohoku University, IMR, Sendai, 980-8578, Japan
Naoya Komatsu
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaiki, Aoba, Sendai, 980-8578, Japan
Yusuke Suto
Affiliation:
[email protected], Tohoku University, Department of Physcis, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Yoshihiro Iwasa
Affiliation:
[email protected], Tohoku University, IMR, Sendai, 980-8578, Japan
Kenta Kotani
Affiliation:
[email protected], Osaka University, Osaka, 565-0871, Japan
Iwao Kawayama
Affiliation:
[email protected], Osaka University, Osaka, 565-0871, Japan
Masayoshi Tonouchi
Affiliation:
[email protected], Osaka University, Osaka, 565-0871, Japan
Katsumi Tanigaki
Affiliation:
[email protected], Tohoku University, Department of Physics, 6-3 Aoba, Aramaki, Aoba, Sendai, 980-8578, Japan
Get access

Abstract

High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Keywords

organicelastic propertiesdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S08-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dimitrakopoulos, C. D. and Malenfant, P. R. L., Adv. Mater. 14, 99 (2002)Google Scholar
2. Jang, Y. et al., Appl. Phys. Lett. 87, 152105 (2005)Google Scholar
3. Abe, Y. et al., Appl. Phys. Lett. 87, 153506 (2005)Google Scholar
4. Boer, B. de et al., Adv. Mater. 17, 621 (2005)Google Scholar
5. Hiroshiba, N. et al., Chem. Phys. Lett. 400, 235 (2004)Google Scholar
6. Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, J., Callegari, A., Shaw, J. M., Science 283, 822 (1999).Google Scholar
7. Stassen, A. F., Boer, R. W. I. de, Iosad, N. N., and Morpurgo, A. F., Appl. Phys. Lett. 85, 3899 (2004).Google Scholar
8. Kubozono, Y., Nagano, T., Haruyama, Y., Kuwahara, E., Takayanagi, T., Ochi, K., and Fujiwara, A. Appl. Phys. Lett. 87, 143506 (2005).Google Scholar
9. Takeya, J., Goldmann, C., Haas, S., Pernstich, K. P., Ketterer, B., and Batlogg, B., J. Appl. Phys. 94, 5800 (2003).Google Scholar
10. Kawayama, Iwao, Kotani, Kenta and Tonouchi, Masayoshi, Jpn. J. Appl. Phys., 41, 6803–6805 (2002)Google Scholar
11. Shimotani, H., Kanbara, T., Iwasa, Y., Tsukagoshi, K., Aoyagi, Y., Kataura, H., Appl. Phys. Lett. 88, 073104 (2006).Google Scholar