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The Role of Low-Energy Ion/Surface Interactions During Crystal Growth from the Vapor Phase: Effects on Microchemistry and Microstructure

Published online by Cambridge University Press:  21 February 2011

J. E. Greene  and
J.-E. Sundgren
J. E. Greene
Affiliation:
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 Springfield Ave. Urbana, Illinois 61801, USA.
J.-E. Sundgren
Affiliation:
Dept. of Physics, Linköping University, S-581 83, Linköping, Sweden.
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Extract

Low-energy (≤ 200 eV) ion irradiation during crystal growth from the vapor phase can be used to provide new chemical reaction pathways, modify film-growth kinetics, and, hence, controllably alter the physical properties of films deposited by a variety of techniques. The latter includes sputter deposition, ion plating, plasma-assisted chemical vapor deposition (PA-CVD), primary-ion deposition (PID), and molecular-beam epitaxy (MBE) using accelerated beam sources. Ion/surface interaction effects such as ion-induced chemistry, trapping, recoil implantation, preferential sputtering, collisional mixing, enhanced diffusion, and alteration in segregation behavior are used to interpret and model experimental results concerning the effects of low-energy particle bombardment on nucleation and growth kinetics, elemental incorporation probabilities, compositional depth distributions, and the growth of metastable phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 127
Copyright
Copyright © Materials Research Society 1990

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