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Rapid Large Area Annealing of Ion-Implanted Si With Incoherent Light

Published online by Cambridge University Press:  15 February 2011

D. J. Lischner  and
G. K. Celler
D. J. Lischner
Affiliation:
Bell Laboratories, Allentown, Pennsylvania, 18103, USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974, USA
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Abstract

We report an extremely rapid and efficient method for annealing ion-implanted wafers by transient irradiation with tungsten halogen lamps. Several 3-inch wafers are held in an inert atmosphere, thermally isolated from the water cooled base and separated by a quartz plate from the air cooled lamps, which can deliver in excess of 100 kW of power. Heating of the wafers up to 1200°C, or even to the melting point of Si, occurs within seconds. The cooling process can be equally rapid. The temperature is continuously monitored with a pyrometer. The radiative flux in the chamber is uniform within 5% over at least 500 cm 2; however, at temperatures 1200 °C radiative losses at the wafer perimeter may cause crystalline slip if proper countermeasures are not taken.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 759
Copyright
Copyright © Materials Research Society 1982

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References

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