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Range Distributions of Boron In Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Depth profiles of 1-2000 keV boron in amorphous and crystalline silicon have been calculated using the computer simulation code COSIPO. Clear inconsistencies have been found in the experimentally measured range parameters. The optimum selection in channeling reduction is found to be a 9° tilt from the ˂001˃-axis combined with a 7° rotation from the ˂100˃- axis. A smaller offset angle yields noticeable channeling at low energies.
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- Copyright © Materials Research Society 1985