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Quality of Bulk Cdte Substrates and Its Relation to Intrinsic Defects

Published online by Cambridge University Press:  21 February 2011

B. K. Meyer ,
D. M. Hofmann ,
W. Stadler ,
P. Emanuelsson ,
P. Omling ,
E. Weigel ,
G. MÜller-Vogt ,
F. Wienecke  and
M. Schenk
B. K. Meyer
Affiliation:
Physikdepartment E16, Technical University Munich, D-8046 Garching, Germany Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
D. M. Hofmann
Affiliation:
Physikdepartment E16, Technical University Munich, D-8046 Garching, Germany
W. Stadler
Affiliation:
Physikdepartment E16, Technical University Munich, D-8046 Garching, Germany
P. Emanuelsson
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
P. Omling
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
E. Weigel
Affiliation:
Kristall- und Materiallabor, University Karlsruhe, D-7500 Karlsruhe, Germany
G. MÜller-Vogt
Affiliation:
Kristall- und Materiallabor, University Karlsruhe, D-7500 Karlsruhe, Germany
F. Wienecke
Affiliation:
Humboldt-University, D-1000 Berlin, Germany
M. Schenk
Affiliation:
Humboldt-University, D-1000 Berlin, Germany
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Abstract

Both the cadmium vacancy (Vcd) and the tellurium vacancy (VTe) in CdTe are identified by means of electron paramagnetic resonance (EPR). The VCd is a double acceptor and the EPR spectrum is observed in its single negative charge state. The symmetry is found to be trigonal, which can be explained in a model in which the hole occupies a dangling bond t2 orbital and the orbital degeneracy is removed by a static Jahn-Teller distortion. The hyperfine interaction shows that the hole is localised on one of the four Te neighbours. The EPR spectrum of VTe+ reveals cubic (unperturbed) symmetry and the hyperfine structure shows that the unpaired electron is equally spread over the four Cd neighbours.

Photo-EPR measurements locate the 0/+ state of VTe at Ev + 0.2 eV and the 2−/− acceptor level of VCd to be situated less than 0.47 eV above the valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 433
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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