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Pulse Electron Beam Annealing of Phosphorus-Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

Victor Borisenko  and
Vladimir Labunov
Victor Borisenko
Affiliation:
Minsk Radioengineering Institute, 6 Podlesnaya, Minsk, USSR
Vladimir Labunov
Affiliation:
Minsk Radioengineering Institute, 6 Podlesnaya, Minsk, USSR
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Abstract

Low-energy electron beam pulses of 0.2–0.8 s duration have been used to anneal silicon wafers implanted with 1.4×1015 P+/cm2 at 30 and 100 keV. Sheet resistivity, carrier concentration profiles and phosphorus atom distributions have been measured. It has been found that the impurity is completely activated without a noticeable diffusion at the energy density of 30 J/cm2 and higher. The annealing process appears to take place via a solid phase diffusion and annihilation of radiation defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 305
Copyright
Copyright © Materials Research Society 1982

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References

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