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Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ zinc Doping

Published online by Cambridge University Press:  01 February 2011

Kenji Nose  and
Toyonobu Yoshida
Kenji Nose
Affiliation:
[email protected], The University of Tokyo, Materials Engineering, 303B Building No.4, 7-3-1 Hongo,, Bunkyo-ku,Tokyo, 113-0033, Japan, 81-3-5841-7099, 81-3-5841-7099
Toyonobu Yoshida
Affiliation:
[email protected], The University of Tokyo, Tokyo, 113-8656, Japan
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Abstract

Silicon and zinc were doped to cubic boron nitride (cBN) thin films by sputtering bulk dopant sources during the film deposition. Concentrations of these two elements showed different in-plane distributions, presumably caused by the difference of the sticking probability on the growing surface. Silicon impurity did not behave as an active dopant in cBN. However, zinc doping enhanced the electric conductivity from 10−8 to 10−2 (Ω−1cm−1) as the zinc concentration increased from undoped to approximately 2 %.

Keywords

electrical propertiesdopantB
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I11-01
Copyright
Copyright © Materials Research Society 2007

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References

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