Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T09:04:53.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2 Thin Films

Published online by Cambridge University Press:  31 January 2011

Damon N. Hebert ,
Julio A. N. T. Soares  and
Angus A. Rockett
Damon N. Hebert
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science & Engineering, 1304 W Green St., Urbana, Illinois, 61801, United States
Julio A. N. T. Soares
Affiliation:
[email protected], Frederick Seitz Materials Research Laboratory, Urbana, Illinois, United States
Angus A. Rockett
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Materials Science & Engineering, Urbana, Illinois, United States
Get access

Abstract

The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ∼16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect. The presence of deep levels contributing to radiative recombination does not necessarily preclude the material from producing a high efficiency device and may suggest the absence of dominant non-radiative recombination pathways. The band edge width as measured by PLE and the separation of this edge from defect states are suggested to be potentially effective indicators of the quality of a material. Luminescence that appears to be connected with the absence of Na in the growth process persists in high Ga alloy, Na containing materials, suggesting that Na may become ineffective in passivating or eliminating certain defects in high Ga material.

Keywords

photovoltaicluminescenceoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M03-05
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rockett, A. presented at the Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE, 2002 (unpublished).Google Scholar
2. Krustok, J. Raudoja, J. Schon, J. H. Yakushev, M. and Collan, H. Thin Solid Films 361, 406–410 (2000).Google Scholar
3. Heath, J. T. Cohen, J. D. and Shafarman, W. N. Journal of Applied Physics 95 (3), 1000–1010 (2004).Google Scholar
4. Rockett, A. Liao, D. Heath, J. T. Cohen, J. D. Strzhemechny, Y. M. Brillson, L. J. Ramanathan, K. and Shafarman, W. N. Thin Solid Films 431, 301–306 (2003).Google Scholar
5. Rega, N. Siebentritt, S. Albert, J. Nishiwaki, S. Zajogin, A. Lux-Steiner, M. C., Kniese, R. and Romero, M. J. Thin Solid Films 480, 286–290 (2005).Google Scholar
6. Siebentritt, S. Papathanasiou, N. and Lux-Steiner, M., Physica Status Solidi B-Basic Solid State Physics 242 (13), 2627–2632 (2005).Google Scholar
7. Niki, S. Makita, Y. Yamada, A. Obara, A. Misawa, S. Igarashi, O. Aoki, K. and Kutsuwada, N. Japanese Journal of Applied Physics Part 2-Letters 33 (4A), L500–L502 (1994).Google Scholar
8. Mickelsen, R. A. Chen, W. S. Hsiao, Y. R. and Lowe, V. E. Electron Devices, IEEE Transactions on 31 (5), 542–546 (1984).Google Scholar
9. Yu, P. W. Journal of Applied Physics 47 (2), 677–684 (1976).Google Scholar
10. Lampert, M. D. Meyer, B. K. Hornung, M. Benz, K. W. Petersson, A. and Samuelson, L. Journal of Crystal Growth 183 (3), 377–384 (1998).Google Scholar
11. Zott, S. Leo, K. Ruckh, M. and Schock, H. W. Journal of Applied Physics 82 (1), 356–367 (1997).Google Scholar
12. Siebentritt, S. and Schuler, S. Journal of Physics and Chemistry of Solids 64 (9-10), 1621–1626 (2003).Google Scholar
13. Werner, J. H. Mattheis, J. and Rau, U. Thin Solid Films 480, 399–409 (2005).Google Scholar
14. Romero, M. J. Ramanathan, K. Contreras, M. A. Al-Jassim, M. M., Noufi, R. and Sheldon, P. Applied Physics Letters 83 (23), 4770–4772 (2003).Google Scholar
15. Liao, D. and Rockett, A. Journal of Applied Physics 91 (4), 1978–1983 (2002).Google Scholar
16. Shafarman, W. N. Klenk, R. and McCandless, B. E. Journal of Applied Physics 79 (9), 7324–7328 (1996).Google Scholar
17. Rega, N. Siebentritt, S. Beckers, I. E. Beckmann, J. Albert, J. and Lux-Steiner, M., Thin Solid Films 431, 186–189 (2003).Google Scholar
18. Rockett, A. Thin Solid Films 480, 2–7 (2005).Google Scholar
19. Wasim, S. M. Rincon, C. Marin, G. Bocaranda, P. Hernandez, E. Bonalde, I. and Medina, E. Physical Review B 64 (19) (2001).Google Scholar
20. Heath, J. T. Cohen, J. D. Shafarman, W. N. Liao, D. X. and Rockett, A. A. Applied Physics Letters 80 (24), 4540–4542 (2002).Google Scholar
21. Schmidt, T. Lischka, K. and Zulehner, W. Physical Review B 45 (16), 8989–8994 (1992).Google Scholar
22. Siebentritt, S. Rega, N. Zajogin, A. and Lux-Steiner, M. C., Physica Status Solidi C 1 (9), 2304–2310 (2004).Google Scholar