Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-28T15:00:48.683Z Has data issue: false hasContentIssue false
  • English
  • Français

Perchlorosilanes and Perchlorocarbosilanes as Precursors to Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

Vladimir Sevastyanov ,
Yurij Ezhov ,
Roman Pavelko  and
Nikolaj Kuznetsov
Yurij Ezhov
Affiliation:
[email protected], Institute for High Energy Densities, "IVTAN" Association, Russian Academy of Science, Izhorskaya st. 13/19, Moscow, N/A, 125412, Russian Federation
Roman Pavelko
Affiliation:
[email protected], N.S.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Science, Leninskij av. 31, Moscow, N/A, 119991, Russian Federation
Nikolaj Kuznetsov
Affiliation:
[email protected], N.S.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Science, Leninskij av. 31, Moscow, N/A, 119991, Russian Federation
Get access

Abstract

Homologues with the general stoichiometry a(SiCl4) : bSi : cC : d(SiC) are shown to be potential precursors for the low-temperature gas-phase synthesis of silicon carbide. Thermal decomposition of these precursors yields the chemically stable gaseous species SiCl4 and condensed Si, C, SiC, SiC+Si, or SiC+C. Thermodynamic modeling of the thermal decomposition of octachlorotrisilane, Si3Cl8, is used to analyze the key features of the thermolysis of perchlorosilanes with the general stoichiometry a(SiCl4) : bSi. The equilibrium compositions of reaction products in the Si3Cl8+CO system are determined. This reaction system enables low-temperature (400 – 1200 K) synthesis of silicon carbide.

Keywords

simulationchemical vapor deposition (CVD) (chemical reaction)pyrolysis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-12
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Konishi, H., Tsuda, H., Mabuchi-Nakatani, H., Morii, K. and Okamura, K., “Silicon Carbide Nanofibers Synthesized Using Simple Chemical Vapor Reaction”, HTCMC-5Google Scholar
2 Besmann, T. M., Sheldon, B. W., Lowden, R. A., Stinton, D. P., Science, 1991, vol. 253, 1104–1109.Google Scholar
3 Powell, J.A., Matus, L.D., Kuczmarski, M.A. J. Electrochem. Soc. 1987, v.134 p.1558 Google Scholar
4 Motojima, S., Hasegawa, M. J.Vac.Sci. Technol. A1990 v.8, P.3763 Google Scholar
5 Zakharov, L.N, Antipin, M.Yu., Struchkov, Yu.T., Gusev, A.V., Gibin, A. M., Zhernenkov, N.V., Kristallografiya V.31 171–172 (1986)Google Scholar
6 Japanese Patent 01197309 Ogi, Katsumi; Kurashige, Tetsushige; Kimura, Etsuji, Preparation of high-purity granular silicon from chlorosilane, 1988 Google Scholar
7 Numata, M.; Kanamori, M.; Sugiura, M.; Fuwa, A., Silicon chemical vapor deposition from Si2Cl6 and Si3Cl8, Int. Conf. Process. Mater. Prop., 1st (1993), 1249–52Google Scholar
8 Chang, Yu-Hsu, Wang, Lung-Shen, Chiu, Hsin-Tien, Lee, Chi-Young, SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films, Carbon 41 (2003) 1169–1174 Google Scholar
9 Warren, H.W., Chem. News, 66, 113, (1892)Google Scholar
10 Kraus, C.A. and Nelson, W.K., J. Amer. chem. Soc. 56,195 (1934)Google Scholar
11 Amer. Pat. 2381000 bis 2381002.Google Scholar
12 C.A., 39, 4888, 4889 (1945)Google Scholar
13 Muller, Rich., Chem. Techn. 2, 7, 41 (1950)Google Scholar
14 Muller, Rich. und Seitz, G., Die synthese silicium organischer Verbindungen aus Chloroform, Chem. Ber. 91, 22 (1958)Google Scholar
15 Muller, Rich. und Muller, W., Uber Silicone XLIV. Umsetzung von Tetrachlorkohlenstoff mit Silicium, Chem. Berihte 92, 1018–1027 (1959)Google Scholar
16 Muller, Rich. und Muller, W., Uber Silicone LXXIV. Die Umsetzung von Bis-trichlorsilyldichlormethanund Tris-trichlorsilyl-chlormethane mit Silicium, Chem. Berihte 96, 2894–2898 (1963)Google Scholar
17 Muller, Rich. und Muller, W., Uber Silicone LXXXII. Uber Trichlosilylgruppen enthaltende 1.3-Disilacyclobutane, Chem. Berihte 97, 1111 (1964)Google Scholar
18 Fritz, G., Grobe, J., Ksinsik, D., Z. anorg. allg. Chem., 302, 175 (1959)Google Scholar
19 Fritz, G., Frohlich, H., Bildung siliciumorganischer Verbindungen. XXXIX., Teilchlorierte Carbosilane, Z. anorg. allg. Chem., 382, 217 (1971)Google Scholar
20 Fritz, G., Worsching, A., Bildung siliciumorganischer Verbindungen. 102 [1] Zur Umsetzung von Chlormethanen mit elementarem Silicium (Bildung und Aufklarung linearer Carbosilane), Z. anorg. allg. Chem. (1984), 131–163 Google Scholar
21 Fritz, G.; Lauble, S.; Befurt, R.; Peters, K.; Peters, E. M.; von Schnering, H. G., Formation of organosilicon compounds. 110, Zeitschrift fuer Anorganische und Allgemeine Chemie (1993), 619(9),1494–511Google Scholar
22 Fritz, G., Beetz, A.G., Matern, E., Peters, K., Peters, E.-M., von Schnering, H.G., Z. Anorg. Allg. Chem. (1994) 620, 136–144 Google Scholar
23 Gurvich, L.V., Iorish, V.S., et. al. IVTANTERMO.- A thermodynamic Database and Software System for the Personal Computer. User's Guide. CRC Press. Inc., Boca Raton, -1993 Google Scholar
24 Belov, G.V., Thermodynamic Modeling: Methods, Algorithms, and Programs (Nauchnyi Mir, 2002).Google Scholar
25 Kochubei, V.V., Kochurina, N.S., and Wang, Cheng-Xiang, Vestn. L'viv. Politekh. Inst. 231, 20 (1989).Google Scholar
26 Gaussian 98, Revision A.11, Frisch, M. J., Trucks, G. W., Schlegel, H. B., Scuseria, G. E., Robb, M. A., Cheeseman, J. R., Zakrzewski, V. G., Montgomery, J. A. Jr, Stratmann, R. E., Burant, J. C., Dapprich, S., Millam, J. M., Daniels, A. D., Kudin, K. N., Strain, M. C., Farkas, O., Tomasi, J., Barone, V., Cossi, M., Cammi, R., Mennucci, B., Pomelli, C., Adamo, C., Clifford, S., Ochterski, J., Petersson, G. A., Ayala, P. Y., Cui, Q., Morokuma, K., Salvador, P., Dannenberg, J. J., Malick, D. K., Rabuck, A. D., Raghavachari, K., Foresman, J. B., Cioslowski, J., Ortiz, J. V., Baboul, A. G., Stefanov, B. B., Liu, G., Liashenko, A., Piskorz, P., Komaromi, I., Gomperts, R., Martin, R. L., Fox, D. J., Keith, T., Al-Laham, M. A., Peng, C. Y., Nanayakkara, A., Challacombe, M., Gill, P. M. W., Johnson, B., Chen, W., Wong, M. W., Andres, J. L., Gonzalez, C., Head-Gordon, M., Replogle, E. S., and Pople, J. A., Gaussian, Inc. Pittsburgh PA, 2001.Google Scholar