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P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si

Published online by Cambridge University Press:  01 February 2011

Anne-Elisabeth Bazin ,
Jean-François Michaud ,
Marc Portail ,
Thierry Chassagne ,
Marcin Zielinski ,
Jean-Marc Lecoq ,
Emmanuel Collard  and
Daniel Alquier
Anne-Elisabeth Bazin
Affiliation:
[email protected], Université François Rabelais de Tours, Laboratoire de Microélectronique de Puissance, 16 rue Pierre et Marie Curie, Tours, 37071, France, +33247424000
Jean-François Michaud
Affiliation:
[email protected], Université François Rabelais de Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
Marc Portail
Affiliation:
[email protected], Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications CNRS–UPR10, Rue Bernard Grégory, Valbonne, 06560, France
Thierry Chassagne
Affiliation:
[email protected], NOVASiC, Savoie Technolac, Arche Bât 4, BP 267, Le Bourget du Lac Cedex, 73375, France
Marcin Zielinski
Affiliation:
[email protected], NOVASiC, Savoie Technolac, Arche Bât 4, BP 267, Le Bourget du Lac Cedex, 73375, France
Jean-Marc Lecoq
Affiliation:
[email protected], STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
Emmanuel Collard
Affiliation:
[email protected], STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
Daniel Alquier
Affiliation:
[email protected], Université François Rabelais de Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
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Abstract

In this work, non-intentionally doped 3C-SiC epilayers were implanted using phosphorus at different energies and subsequently annealed at temperatures between 1100°C and 1350°C in order to form n+ implanted layers. Different techniques such as Fourier Transformed InfraRed spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) were used to characterize implanted 3C-SiC epilayers after the different annealing steps. Successively, metal layers were sputtered in order to form the contacts. The specific contact resistance (ñC) was determined by using circular Transfer Length Method (c-TLM) patterns. Specific contact resistance values were investigated as a function of doping and contact annealing conditions and compared to those obtained for highly doped 3C-SiC epilayers. As expected, ñC value is highly sensitive to post-implantation annealing and metal contact annealing. This work demonstrates that low resistance values can be achieved using phosphorus implantation and, hence, enabling device processing.

Keywords

ion-implantationannealingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C07-09
Copyright
Copyright © Materials Research Society 2008

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References

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